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Si2315BDS
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Limits
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V (BR)DSS
V GS(th)
V GS = 0 V, I D = - 10 μA
V DS = V GS , I D = - 250 μA
- 12
- 0.45
- 0.90
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = - 12 V, V GS = 0 V
V DS = - 12 V, V GS = 0 V, T J = 55 °C
V DS ≤ - 5 V, V GS = - 4.5 V
V DS ≤ - 5 V, V GS = - 2.5 V
V GS = - 4.5 V, I D = - 3.85 A
-6
-3
0.040
± 100
-1
- 10
0.050
nA
μA
A
Drain-Source On
Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 3.4 A
0.050
0.065
Ω
V GS = - 1.8 V, I D = - 2.7 A
0.071
0.100
Forward Transconductance a
Diode Forward Voltage a
g fs
V SD
V DS = - 5 V, I D = - 3.85 A
I S = - 1.6 A, V GS = 0 V
7
- 1.2
S
V
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q g
Q gs
Q gd
V DS = - 6 V, V GS = - 4.5 V
I D ? - 3.85 A
8
1.1
2.3
15
nC
Input Capacitance
C iss
715
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = - 6 V, V GS = 0 V, f = 1 MHz
275
200
pF
Switching b
Turn-On Time
Turn-Off Time
t d(on)
t r
t d(off)
t f
V DD = - 6 V, R L = 6 Ω
I D ? - 1.0 A, V GEN = - 4.5 V
R G = 6 Ω
15
35
50
50
20
50
70
75
ns
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 μs duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72014
S-80642-Rev. E, 24-Mar-08
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